Power Semiconductors: Markets, Materials and Technologies

A power semiconductor device is used as a switch (controlling power on or off) or rectifier (converting AC to DC) in power electronics, for example, in frequency conversion home appliance, EVs, EV chargers, welding inverter, industrial robots, etc. As of 2019, Power semiconductors was a US$41bn global market, or c.10% of global semiconductor market size.

Power semiconductors could be divided into two parts: (1) Power discrete and (2) Power IC, with each parts roughly contributing 50% of the power semiconductors market size by revenue. When a power semiconductor device is in the form of integrated circuit, it is called Power IC, otherwise referred to as a power discrete.

Power semiconductors is a US$41bn market globally, and within this market, we are positive on IGBTs and MOSFETs, given the growing market driven by (1) rising energy efficiency requirement in multiple applications such as EV, industrial control, and home appliances, and (2) the rising demand for Chinese suppliers driven by a large domestic market and multiple Chinese brands in home appliances, automobiles and industrial look to diversify their supply chains amid growing trade tensions.

The global IGBT leaders usually cover a full range of applications from consumer electronics, automotive, and industrial controls, to power generation, infrastructure, and railway. Each of these sectors is analyzed in the report.

The global MOSFET leaders usually cover the full range of applications from consumer electronics, automotive, computing, motor driver, power supply, telecom network, EV charging, LED lighting, to medical. Each of these sectors is analyzed in the report.

The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computer and consumer electronics, such as desktop computers, notebooks, netbooks, smartphones, flat panel displays and portable media players that require sophisticated power management to improve power efficiency and extend battery life.

Power Semiconductors: Markets, Materials and Technologies
TABLE OF CONTENTS

Chapter 1. Introduction

1.1. Manufacturing Processes Are Differentiation Factors
1.2. Vertical Structure Devices Differ From Usual MOS Planar Structure
1.3. Super Junction Processes
1.4. GaN and SiC Semiconductors

Chapter 2. Applications of Power Semiconductors

2.1. Power Semiconductors in Renewable Energy
2.1.1. Solar
2.1.2. Wind
2.2. Power Semiconductors in Hybrid & Electric Vehicles
2.2.1. Automotive Megatrends
2.2.2. Wide Bandgap Devices for HEVs/EVs
2.3. Power Semiconductors in LED Lighting
2.4. Power Semiconductors in Industrial Motor Drives
2.5. Power Semiconductors in Smart Home Market
2.6. GaN and SiC Market Forecast For End Applications

Chapter 3. Market Analysis

3.1. Position of Power Semiconductors in Semiconductor Market
3.2. Growth Potential of IGBTs and Power MOSFETs
3.3. IGBT Market
3.3.1. IGBT Technology Trends
3.3.2. IGBT TAM
3.3.3. IGBT Market Growth By Applications
3.3.3.1 Automotive
3.3.3.2 Power Generation And Grid
3.3.3.3 Consumer Electronics
3.3.3.4 Industrial Controls
3.3.3.5 Railway/Train
3.3.3.6 EV Charging Systems
3.3.4 IGBT Competitive Landscape
3.3.4.1 Global And China Market Share
3.3.4.2 IGBT Business Model
3.3.4.3 Technology Gap Between China And Global Players
3.4. MOSFET TAM
3.4.1. MOSFET TAM Methodology
3.4.2. MOSFET Market Growth By Applications
3.4.2.1 Automotive
3.4.2.2 EV Charging
3.4.2.3 Industrial And Medical
3.4.2.4 Consumer
3.4.2.5 Telecom Network
3.4.3.6 Computing
3.4.4. MOSFET Competitive Landscape
3.4.4.1 Global And China Market Share
3.4.4.2 China Suppliers’ Technology/Product Gaps Vs Global Peers
3.5. Emerging End Application Markets
3.5.1. Electric Vehicles
3.5.2. 5G Infrastructure
3.4. Wide Bandgap Power Semiconductor Market

Chapter 4. Next-Generation Power Semiconductors

4.1. Expectations for Overcoming Silicon’s Limitations
4.2. Expectations Of SiC and GaN as Next-Generation Substrates
4.3. Benefits of Wide Band Gap Semiconductors
4.4. SiC versus GaN
4.4.1. Material Properties
4.4.2. Material Quality
4.4.3. SiC Lateral Devices:
4.4.4. SiC Vertical Devices
4.4.5. GaN Lateral Devices
4.5. Fabrication of SiC devices
4.5.1. Bulk and Epitaxial Growth of SiC
4.5.1.1 Bulk Growth
4.5.1.2 Epitaxial Growth
4.5.1.3 Defects
4.5.2. Surface Preparation
4.5.3. Etching
4.5.4. Lithography
4.5.5. Ion Implantation
4.5.6. Surface Passivation
4.5.7. Metallization
4.6. Fabrication of GaN devices
4.6.1. GaN Challenges
4.6.1.1 Costs
4.6.1.2 Reliability
4.6.1.3 Component Packaging and Thermal Reliability
4.6.1.4 Control
4.6.1.5 Device Modeling
4.7. Packaging

Chapter 5. Company Profiles

5.1. Power Semiconductor Companies
5.1.1. Infineon
5.1.2. Mitsubishi
5.1.3. Toshiba
5.1.4. STMicroelectronics
5.1.5. Vishay
5.1.6. Fuji Electric
5.1.7. Renesas
5.1.8. Semikron
5.1.9. NXP Semiconductors
5.1.10. Hitachi Power Semiconductor Device
5.1.11. X-Rel Semiconductor
5.1.12. Advanced Linear Devices
5.1.13 Nexperia
5.1.14. Rohm
5.1.15. Sanken Electric
5.1.16. Shindengen Electric
5.1.17. Microchip Technology
5.1.18. GeneSiC Semiconductor
5.1.19. Semisouth Laboratories
5.1.20. United Silicon Carbide
5.1.21. MicroGaN
5.1.22. Powerex
5.1.23. Nitronix
5.1.24. Transform
5.1.25. Allegro Microsystems
5.1.26. GaN Systems
5.1.27 Navitas Semiconductor
5.1.28. Alpha and Omega Semiconductor
5.1.29. ON Semiconductor
5.1.30. Jilin Sino-Microelectronics
5.1.31. BYD Microelectronics
5.1.32. Yangzhou Yangjie Electronic Technology
5.1.33. StarPower
5.1.34. Sino Micro
5.1.35. Yangjie
5.1.36. Jiejie
5.1.37. GoodArk
5.1.38. NCE Power
5.2. SiC Wafer-Related Companies
5.3. GaN Wafer-Related Companies

LIST OF FIGURES

1.1. Evolution Of IGBT Chip Structure
1.2. Effects Of Miniaturization Of IGBT Chip
1.3. SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET
1.4. Planar And Vertical (Trench) MOSFET
1.5. Schematic Of A FinFET
1.6. Schematic Of A MOSFET And Super Junction MOSFET
1.7. SiC U MOSFET
2.1. Forecast Of Solar Power
2.2. Full Bridge IGBT Topology
2.3. Block Diagram Of Microcontroller-Based Inverter
2.4. Worldwide Wind Turbine Shipments
2.5. Top Wind Power Capacity by Country
2.6. Bill Of Materials For A Typical 30-50kw Inverter
2.7. A Simple Diagram Of A HEV Traction Drive System.
2.8. A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV)
2.9. Conducting And Switching Loses For Inverter
2.10. Unit Pricing Trends In Power Semiconductors
2.11. System And Component Costs For Wide Bandgap Semiconductors
2.12. Vertical And Lateral HEMT
2.13. GaN Lateral And GaN Vertical HEMTs In EVs
2.14. Market Drivers For LED Biz And Applications
2.15. SSL Vs. Classical Technologies
2.16. LED Performance Vs. Traditional Light Sources
2.17. Energy Production And Use Comparison
2.18. Typical LED Drive Circuit
2.19. Integration Of LED And LED Driver Using TSV
2.20. Simple Power MOSFET Motor Controller
2.21. Basic Operating Principle Of Inverter
2.22. System Block Diagram Of An Air Conditioner
3.1. Mitsubishi’s IGBT (Insulated Gate Bipolar Transistor) Generations
3.2. Infineon’s MOSFET Generations
3.3. Intel’s FinFET Design
3.4. Fuji’s MOSFET versus Super Junction MOSFET
3.5. NEC’s GaN-on-Si Power Transistor
3.6. Fujitsu’s GaN-on-SiC HEMT Transistor
3.7. Power Semiconductor Market Forecast
3.8. Power Semiconductor Market Shares
3.9. Market Forecast For Super Junction MOSFET
3.10. SJ MOSFETs as an Interim Solution
3.11. Global IGBT Shares By Application
3.12. China IGBT Shares By Application
3.13. Global And China Automotive IGBT Forecast
3.14. Global And China Power Generation IGBT Forecast
3.15. Global And China Consumer IGBT Forecast
3.16. Global And China Industrial IGBT Forecast
3.17. Global And China Industrial IGBT Forecast
3.18. Global And China EV Charging IGBT Forecast
3.19. Global IGBT Module Market Shares
3.20. Global IGBT Discrete Market Shares
3.21. Global MOSFET Shares By Application
3.22. China MOSFET Shares By Application
3.23. Global And China Automotive MOSFET Forecast
3.24. Global And China EV Charging MOSFET Forecast
3.25. Global And China Industrial MOSFET Forecast
3.26. Global And China Consumer MOSFET Forecast
3.27. Global And China Telecom MOSFET Forecast
3.28. Global And China Telecom MOSFET Forecast
3.29. MOSFET Market Shares
3.30. Power Demands For ICE And EV
3.31. 5G Demand for Power Semiconductors
3.32. Forecast of Wide Bandgap Semiconductor Market
4.1. Silicon-Based Devices Reaching Maturity
4.2. Enhancement Mode GaN On Si Transistor
4.3. AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT
4.4. GaN HEMT Material Structure On Si Substrate
4.5. Power Package Integration Roadmap

LIST OF TABLES

2.1. Product Families And The Principal End Uses Of Power Products
2.2. Forecast Of On-Grid Inverters By Type
2.3. EV Shipment Forecast
2.4. Advantages And Disadvantages Of GaN Lateral HEMTs
2.5. Light Source Comparison
2.6. Forecast Of GaN And SiC Power Devices By End Applications
3.1. Power Semiconductor Forecast for Electric Vehicles
3.2. 5G Semiconductor Total Available Market Forecast
4.1. Physical Properties Of Select Semiconductor Materials
4.2. Wide Bandgap Material Properties
4.3. Lattice Constant And CTE Of Semiconductor Starting Material
4.4. GaN FET Vs Si MOSFET Characteristics
4.5. Standard Chemical Solution For Surface Preparation Of SiC Substrates
4.6. Interface Trap Densities For 4H-SiC Under Different Process Conditions